Manufacturer Part Number
SPB04N60C3
Manufacturer
Infineon Technologies
Introduction
High-voltage, low on-resistance N-channel MOSFET in a TO-263 package
Product Features and Performance
Avalanche rated
Low gate charge
Low gate-source voltage
Fast switching speed
High power density
Product Advantages
Low conduction losses
Compact design
Reliable performance
Efficient power conversion
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
On-resistance (Rds(on)): 950mΩ @ 2.8A, 10V
Continuous Drain Current (Id): 4.5A @ 25°C
Input Capacitance (Ciss): 490pF @ 25V
Power Dissipation (Tc): 50W
Quality and Safety Features
RoHS3 compliant
Meets industrial safety standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Renewable energy systems
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options are available
Key Reasons to Choose This Product
Excellent performance-to-size ratio
High efficiency and low losses
Reliable and durable construction
Proven track record in industrial applications
Compatibility with a wide range of power systems