Manufacturer Part Number
SPB02N60C3
Manufacturer
Infineon Technologies
Introduction
The SPB02N60C3 is a high-performance N-channel MOSFET transistor designed for a wide range of power electronics applications.
Product Features and Performance
600V drain-source voltage rating
3Ω maximum on-resistance at 1.1A, 10V
8A continuous drain current at 25°C
200pF maximum input capacitance at 25V
25W maximum power dissipation at Tc
Product Advantages
Excellent performance and efficiency
Robust design for reliable operation
Compact and easy to integrate
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3Ω @ 1.1A, 10V
Drain Current (Id): 1.8A (Tc)
Input Capacitance (Ciss): 200pF @ 25V
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Surface mount package (TO-263-3, D-Pak)
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial electronics
Product Lifecycle
This product is currently in production and available.
Replacements and upgrades may be available in the future.
Key Reasons to Choose
Excellent performance and efficiency
Robust and reliable design
Compact and easy to integrate
Wide operating temperature range
RoHS3 compliance for environmental safety