Manufacturer Part Number
SMBTA56E6327HTSA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
PG-SOT23 Package
TO-236-3, SC-59, SOT-23-3 Package
Tape & Reel (TR) Packaging
Operating Temperature: 150°C (TJ)
Power Rating: 330 mW
Collector-Emitter Breakdown Voltage: 80 V
Collector Current (Max): 500 mA
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage: 250 mV @ 10 mA, 100 mA
DC Current Gain (hFE): 100 @ 100 mA, 1 V
Transition Frequency: 100 MHz
Surface Mount Mounting
Product Advantages
High-performance PNP bipolar transistor
Suitable for a wide range of applications
Compact and efficient design
Key Technical Parameters
Voltage: 80 V Collector-Emitter Breakdown Voltage
Current: 500 mA Collector Current (Max)
Power: 330 mW Power Rating
Frequency: 100 MHz Transition Frequency
Gain: 100 DC Current Gain (hFE)
Quality and Safety Features
RoHS3 Compliant
Reliable and durable design
Compatibility
Compatible with a variety of electronic circuits and systems
Application Areas
Amplifiers
Switches
Logic gates
Power supplies
Audio and video circuits
Product Lifecycle
Current product, no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
High-performance PNP bipolar transistor
Compact and efficient design
Wide operating temperature range
Reliable and durable construction
Compatibility with various electronic applications
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