Manufacturer Part Number
SMBTA92E6327
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
Automotive-grade, AEC-Q101 qualified
Wide operating temperature range up to 150°C
High breakdown voltage of 300V
High collector current capability up to 500mA
High current gain (hFE) of at least 40
High transition frequency of 50MHz
Low collector-emitter saturation voltage
Product Advantages
Reliable performance in automotive and industrial applications
Compact surface-mount packaging
Versatile use in various electronic circuits
Key Technical Parameters
Power Rating: 360mW
Collector-Emitter Breakdown Voltage: 300V
Collector Current (Max): 500mA
Collector Cutoff Current: 100nA
Collector-Emitter Saturation Voltage: 500mV
Quality and Safety Features
RoHS3 compliant
AEC-Q101 automotive-grade qualified
Compatibility
Compatible with TO-236-3, SC-59, and SOT-23-3 package footprints
Application Areas
Automotive electronics
Industrial control systems
Power supplies
Amplifiers
Switching circuits
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose This Product
Robust automotive-grade performance
High reliability and long-term stability
Broad temperature range and high power handling
Compact and space-efficient surface-mount package
Versatile applications in various electronic systems