Manufacturer Part Number
SMBTA42E6327
Manufacturer
Infineon Technologies
Introduction
This is a single bipolar junction transistor (BJT) from Infineon Technologies, designed for automotive and other high-reliability applications.
Product Features and Performance
High breakdown voltage of 300V
High current handling capacity up to 500mA
High transition frequency of 70MHz
Low saturation voltage of 500mV @ 20mA
High current gain of at least 40 @ 30mA, 10V
Product Advantages
Robust and reliable performance for automotive and industrial use
High voltage and current capability for power switching applications
Fast switching speed suitable for high-frequency circuits
Low saturation voltage improves efficiency in power circuits
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 300V
Collector Current (Max): 500mA
Collector Cutoff Current: 100nA
DC Current Gain: Min 40 @ 30mA, 10V
Transition Frequency: 70MHz
Power Dissipation: 360mW
Operating Temperature: -55°C to 150°C
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant for environmental safety
Compatibility
This transistor is a surface mount device in the TO-236-3 (SOT-23-3) package, compatible with standard SMT assembly processes.
Application Areas
Automotive electronics
Industrial control and power electronics
High-voltage switching circuits
High-frequency amplifier and switching circuits
Product Lifecycle
This is an active product, with no indication of discontinuation. Replacement or upgraded parts may become available in the future as technology evolves.
Key Reasons to Choose This Product
Robust and reliable performance for demanding applications
High voltage and current capability enabling compact circuit designs
Fast switching speed suitable for high-frequency power circuits
Low saturation voltage improves efficiency in power conversion
Automotive-grade qualification for safety-critical applications
