SI4435DYTRPBF - Infineon Technologies

Manufacturer Part Number

SI4435DYTRPBF

Manufacturer

Infineon Technologies

Introduction

The SI4435DYTRPBF is a P-channel enhancement mode power MOSFET from Infineon Technologies.

Product Features and Performance

Operates in the temperature range of -55°C to 150°C

Drain-to-Source Voltage (Vdss) of 30V

Gate-to-Source Voltage (Vgs) of ±20V

On-resistance (Rds(on)) of 20mΩ at 8A, 10V

Continuous Drain Current (Id) of 8A at 25°C

Input Capacitance (Ciss) of 2320pF at 15V

Power Dissipation (Pd) of 2.5W at 25°C

Product Advantages

Low on-resistance for efficient power switching

Wide temperature range for diverse applications

Surface mount packaging for easy integration

Key Technical Parameters

MOSFET Technology: P-Channel Enhancement Mode

Threshold Voltage (Vgs(th)): 1V at 250μA

Drive Voltage Range: 4.5V to 10V

Gate Charge (Qg): 60nC at 10V

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Suitable for a variety of power switching applications

Application Areas

Power supplies

Motor control

Lighting control

Battery management

Product Lifecycle

The SI4435DYTRPBF is an active product with no known plans for discontinuation.

Replacement or upgrade options may be available from Infineon Technologies.

Key Reasons to Choose This Product

Excellent power handling capabilities with low on-resistance

Wide operating temperature range for versatile applications

Surface mount package for easy integration into compact designs

RoHS3 compliance for use in environmentally-conscious applications

Availability in tape and reel packaging for automated manufacturing