Manufacturer Part Number
SI4435FDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
P-channel enhancement mode FET with low on-resistance and fast switching characteristics.
Product Features and Performance
Trench MOSFET technology
Low on-resistance
Fast switching
Wide temperature range (-55°C to 150°C)
High drain current capability (12.6A at 25°C)
Low input capacitance (1500pF)
Low gate charge (42nC)
Product Advantages
Efficient power conversion
High power density
Reliable performance across wide temperature range
Suitable for high-current switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs) Max: ±20V
On-resistance (Rds(on)) Max: 19mΩ
Continuous Drain Current (Id) at 25°C: 12.6A
Input Capacitance (Ciss) Max: 1500pF
Power Dissipation Max: 4.8W
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
Compatible with various power management and control applications
Application Areas
Switch-mode power supplies
Motor drives
Battery management systems
Industrial and automotive electronics
Product Lifecycle
Currently available
No plans for discontinuation
Replacement or upgrade models may become available in the future
Several Key Reasons to Choose This Product
High efficiency and power density
Reliable performance across wide temperature range
Suitable for high-current switching applications
Easy integration into various power systems
RoHS3 compliance for environmental responsibility