Manufacturer Part Number
SGB30N60
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Single Transistor IGBT (Insulated Gate Bipolar Transistor)
Product Features and Performance
RoHS3 Compliant
Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Operating Temperature: -55°C to 150°C (TJ)
Power Rating: 250 W
IGBT Type: NPT (Non-Punch Through)
Collector-Emitter Breakdown Voltage (Max): 600 V
Collector Current (Max): 41 A
Collector-Emitter Saturation Voltage (Max): 2.4 V @ 15 V, 30 A
Gate Charge: 140 nC
Collector Current Pulsed (Max): 112 A
Switching Energy: 1.29 mJ
Turn-On/Turn-Off Delay Time: 44 ns / 291 ns
Product Advantages
High power density
Low on-state voltage
Fast switching
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 41 A
Vce(on) (Max) @ Vge, Ic: 2.4 V @ 15 V, 30 A
Gate Charge: 140 nC
Current Collector Pulsed (Icm): 112 A
Switching Energy: 1.29 mJ
Td (on/off) @ 25°C: 44 ns / 291 ns
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
Power electronics
Motor control
Inverters
Welding equipment
Induction heating
Switch-mode power supplies
Product Lifecycle
Current product
Replacement/upgrade options available
Key Reasons to Choose
High power density
Low on-state voltage
Fast switching
RoHS3 compliance
Surface mount compatibility