SGB8206ANTF4G - onsemi

Manufacturer Part Number

SGB8206ANTF4G

Manufacturer

onsemi

Introduction

The SGB8206ANTF4G is a discrete semiconductor product, specifically an Insulated Gate Bipolar Transistor (IGBT) in a single package.

Product Features and Performance

Power rating of up to 150 W

Collector-Emitter Breakdown Voltage (VCEO) of up to 390 V

Collector Current (IC) of up to 20 A

Low Collector-Emitter Saturation Voltage (VCE(on)) of 1.9 V at 4.5 V, 20 A

Logic-level input type

Product Advantages

High power handling capability

High voltage rating

High current rating

Low conduction losses

Logic-level input for easy control

Key Technical Parameters

Power Rating: 150 W

Collector-Emitter Breakdown Voltage: 390 V

Collector Current: 20 A

Collector-Emitter Saturation Voltage: 1.9 V @ 4.5 V, 20 A

Input Type: Logic

Quality and Safety Features

Complies with RoHS requirements

Reliable and robust design

Compatibility

Surface mount package (D2PAK)

Compatible with various electronic systems and applications

Application Areas

Power conversion and control

Motor drives

Switching power supplies

Industrial automation

Renewable energy systems

Product Lifecycle

Current production model

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

High power and voltage handling capabilities

Low conduction losses for improved efficiency

Logic-level input for easy integration

Reliable and robust design

Compatibility with various applications