Manufacturer Part Number
SGB8206ANTF4G
Manufacturer
onsemi
Introduction
The SGB8206ANTF4G is a discrete semiconductor product, specifically an Insulated Gate Bipolar Transistor (IGBT) in a single package.
Product Features and Performance
Power rating of up to 150 W
Collector-Emitter Breakdown Voltage (VCEO) of up to 390 V
Collector Current (IC) of up to 20 A
Low Collector-Emitter Saturation Voltage (VCE(on)) of 1.9 V at 4.5 V, 20 A
Logic-level input type
Product Advantages
High power handling capability
High voltage rating
High current rating
Low conduction losses
Logic-level input for easy control
Key Technical Parameters
Power Rating: 150 W
Collector-Emitter Breakdown Voltage: 390 V
Collector Current: 20 A
Collector-Emitter Saturation Voltage: 1.9 V @ 4.5 V, 20 A
Input Type: Logic
Quality and Safety Features
Complies with RoHS requirements
Reliable and robust design
Compatibility
Surface mount package (D2PAK)
Compatible with various electronic systems and applications
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Industrial automation
Renewable energy systems
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High power and voltage handling capabilities
Low conduction losses for improved efficiency
Logic-level input for easy integration
Reliable and robust design
Compatibility with various applications
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