ISZ019N03L5SATMA1 - Infineon Technologies

Manufacturer Part Number

ISZ019N03L5SATMA1

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET with optimized on-state resistance and switching performance

Product Features and Performance

Drain-to-source voltage (Vdss) of 30V

Low on-state resistance (Rds(on)) of 1.9mΩ @ 20A, 10V

High continuous drain current (Id) of 22A (Ta) and 40A (Tc)

Wide operating temperature range of -55°C to 150°C

Low input capacitance (Ciss) of 2800pF @ 15V

Fast switching with low gate charge (Qg) of 44nC @ 10V

Product Advantages

Optimized performance for high-efficiency power conversion applications

Improved thermal management and power density

Robust and reliable design for harsh operating conditions

Key Technical Parameters

Vdss: 30V

Vgs(th) (Max): 2V @ 250A

Rds(on) (Max): 1.9mΩ @ 20A, 10V

Id (Continuous): 22A (Ta), 40A (Tc)

Ciss (Max): 2800pF @ 15V

Qg (Max): 44nC @ 10V

Quality and Safety Features

RoHS3 compliant

Reliable surface-mount package (PG-TSDSON-8-FL)

Compatibility

Suitable for a wide range of power conversion and control applications

Application Areas

Switching power supplies

Motor drives

Industrial automation

Telecom and server power

Product Lifecycle

This product is currently in production and not nearing discontinuation

Replacement or upgrade options are available if needed

Several Key Reasons to Choose This Product

Excellent performance-to-cost ratio for high-efficiency power conversion

Reliable and robust design for demanding applications

Optimized switching characteristics for improved system efficiency

Wide operating temperature range for versatile use

Compact and thermally efficient surface-mount package