Manufacturer Part Number
STD5N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor with low on-resistance for efficient power conversion and switching applications.
Product Features and Performance
600V Drain-Source Voltage
Low On-Resistance (1.55Ω @ 1.75A, 10V)
High Continuous Drain Current (3.5A @ 25°C)
Wide Operating Temperature Range (-55°C to 150°C)
Low Input Capacitance (375pF @ 100V)
Low Gate Charge (8.6nC @ 10V)
Product Advantages
Efficient power conversion and switching
Reliable performance across wide temperature range
Compact DPAK surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.55Ω @ 1.75A, 10V
Continuous Drain Current (Id): 3.5A @ 25°C
Input Capacitance (Ciss): 375pF @ 100V
Gate Charge (Qg): 8.6nC @ 10V
Power Dissipation (Tc): 45W
Quality and Safety Features
RoHS3 compliant
DPAK package for reliable surface mount
Compatibility
Compatible with a wide range of power conversion and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Efficient power conversion and switching performance
Reliable operation across wide temperature range
Compact surface mount DPAK package
RoHS3 compliance for environmental responsibility
STD5NB30VBSEMI
STD5NE10STMicroelectronics