STD5N62K3 - STMicroelectronics

Manufacturer Part Number

STD5N62K3

Manufacturer

STMicroelectronics

Introduction

High-voltage, N-channel power MOSFET in a DPAK package, part of the SuperMESH3 series.

Product Features and Performance

Drain-to-source voltage (Vdss) of 620 V

Very low on-resistance (Rds(on)) of 1.6 Ω at 2.1 A, 10 V

High continuous drain current (Id) of 4.2 A at 25°C case temperature

Low input capacitance (Ciss) of 680 pF at 50 V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power handling capability

Efficient power conversion and low power loss

Compact DPAK package for space-saving designs

Suitable for high-voltage, high-current applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 620 V

Gate-to-source voltage (Vgs): ±30 V

On-resistance (Rds(on)): 1.6 Ω at 2.1 A, 10 V

Continuous drain current (Id): 4.2 A at 25°C case temperature

Input capacitance (Ciss): 680 pF at 50 V

Power dissipation (Tc): 70 W

Quality and Safety Features

RoHS3 compliant

MOSFET technology with reliable performance

Compatibility

Surface mount DPAK package

Suitable for a wide range of high-voltage, high-current applications

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

Excellent power handling and efficiency

Compact DPAK package for space-saving designs

Wide operating temperature range

Reliable performance and RoHS3 compliance

Suitable for a variety of high-voltage, high-current applications