Manufacturer Part Number
IRFS3207ZTRRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel HEXFET power MOSFET for high-frequency switched-mode power supply and motor drive applications.
Product Features and Performance
Optimized for high efficiency power conversion
Low on-resistance for low conduction losses
High switching speed for high-frequency operation
Robust avalanche capability
Qualified to AEC-Q101 standard for automotive applications
Product Advantages
Superior efficiency and power density
Reduced energy consumption and heat generation
Reliable and durable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 75 A, 10 V
Current Continuous Drain (Id) @ 25°C: 120 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
Power Dissipation (Max): 300 W (Tc)
Vgs(th) (Max) @ Id: 4 V @ 150 A
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Reliable and robust design
Compatibility
Suitable for use in high-frequency switched-mode power supplies and motor drive applications
Application Areas
Industrial power supplies
Motor drives
Inverters
Battery chargers
Welding equipment
Solar power systems
Product Lifecycle
This product is an active and widely used device
Replacements and upgrades are readily available from Infineon
Key Reasons to Choose This Product
Excellent efficiency and power density for high-frequency power conversion
Low conduction and switching losses for reduced energy consumption and heat generation
Robust and reliable performance, qualified to automotive standards
Wide range of industrial and automotive applications
IRFS3306IR