Manufacturer Part Number
IRFS3206TRRPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel HEXFET power MOSFET
Designed for high-power switching applications
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed
High current handling capability
Wide operating temperature range (-55°C to 175°C)
Low gate charge for efficient switching
Rugged design for reliability
Product Advantages
Excellent thermal management
Optimized for high-power, high-frequency applications
Reduced conduction and switching losses
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3mΩ @ 75A, 10V
Continuous Drain Current (Id): 120A @ 25°C
Input Capacitance (Ciss): 6540pF @ 50V
Power Dissipation (Tc): 300W
Quality and Safety Features
RoHS3 compliant
Rigorously tested for reliability and quality
Compatibility
Suitable for a wide range of high-power, high-frequency applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power converters
Product Lifecycle
Current production model
Replacement parts and upgrades available
Key Reasons to Choose This Product
Excellent efficiency and performance
Reliable and rugged design
Optimized for high-power, high-frequency applications
Wide operating temperature range
Easy integration and compatibility