Manufacturer Part Number
IRFS3306TRLPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor
Suitable for power switching and power management applications
Product Features and Performance
Wide operating temperature range (-55°C to 175°C)
Low on-state resistance (4.2 mΩ @ 75 A, 10 V)
High continuous drain current (120 A @ 25°C)
Low gate charge (120 nC @ 10 V)
High power dissipation (230 W @ Tc)
Fast switching speed
Product Advantages
Efficient power conversion and management
Improved energy efficiency
Reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Gate-to-Source Voltage (Vgs): ±20 V
On-State Resistance (Rds(on)): 4.2 mΩ @ 75 A, 10 V
Continuous Drain Current (Id): 120 A @ 25°C
Input Capacitance (Ciss): 4520 pF @ 50 V
Power Dissipation (Pd): 230 W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Compatible with various power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Power conversion systems
Industrial and automotive electronics
Product Lifecycle
Currently available
No discontinuation or replacement information available
Key Reasons to Choose This Product
Excellent performance in terms of low on-state resistance, high current handling, and high power dissipation
Reliable operation in a wide temperature range
Efficient power conversion and management
Suitable for a variety of power electronics applications
RoHS3 compliance for environmental sustainability
IRFS3306TRLPBF MOSIR
IRFS3306PBFInternational RectifierMOSFET N-CH 60V 120A D2PAK