Manufacturer Part Number
IRFR5505TRLPBF
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a P-channel MOSFET transistor from the HEXFET series.
Product Features and Performance
55V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
110mΩ Maximum On-Resistance (Rds(on)) at 9.6A, 10V
18A Continuous Drain Current (Id) at 25°C
650pF Maximum Input Capacitance (Ciss) at 25V
57W Maximum Power Dissipation (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
High-performance MOSFET design
Low on-resistance for efficient power conversion
Compact D-Pak surface-mount package
Key Technical Parameters
MOSFET technology
P-channel FET type
4V Maximum Gate Threshold Voltage (Vgs(th)) at 250A
10V Drive Voltage (Max Rds(on), Min Rds(on))
32nC Maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
This MOSFET is suitable for a variety of power conversion and control applications.
Application Areas
Switch-mode power supplies
Motor drives
Lighting controls
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently in production and readily available. There are no plans for discontinuation or immediate replacement.
Several Key Reasons to Choose This Product
Reliable and efficient MOSFET performance
Compact and surface-mountable D-Pak package
Wide operating temperature range
Compliance with RoHS regulations
Availability in convenient tape and reel packaging
IRFR5505TRPBF MOSIR
IRFR6215Cypress Semiconductor (Infineon Technologies)