Manufacturer Part Number
IRFR6215TRPBF
Manufacturer
Infineon Technologies
Introduction
This product is a P-channel MOSFET transistor that is part of Infineon's HEXFET series.
Product Features and Performance
Drain to Source Voltage (Vdss) of 150V
Maximum Gate-Source Voltage (Vgs) of ±20V
Maximum On-State Resistance (Rds(on)) of 295mΩ @ 6.6A, 10V
Continuous Drain Current (Id) of 13A @ 25°C
Input Capacitance (Ciss) of 860pF @ 25V
Maximum Power Dissipation of 110W @ Tc
Product Advantages
Low on-state resistance for improved efficiency
High voltage rating for use in high-voltage applications
Wide operating temperature range of -55°C to 175°C
Suitable for surface mount applications
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
TO-252-3, D-Pak (2 Leads + Tab) Package
Threshold Voltage (Vgs(th)) of 4V @ 250A
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
This MOSFET is compatible with a variety of electronic circuits and applications that require a P-channel transistor with the specified electrical characteristics.
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
General power conversion applications
Product Lifecycle
This product is currently in production and not nearing discontinuation. Replacement or upgraded versions may become available in the future as technology progresses.
Key Reasons to Choose This Product
High voltage rating and low on-state resistance for efficient power switching
Wide operating temperature range for use in demanding environments
Surface mount packaging for easy integration into compact designs
RoHS compliance for use in environmentally-conscious applications
Availability in convenient tape and reel packaging for automated assembly