Manufacturer Part Number
IRFR5505
Manufacturer
Infineon Technologies
Introduction
High-performance P-channel power MOSFET in a TO-252-3 (D-Pak) package
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage up to 55V
Low on-state resistance (Rds(on)) of 110mΩ @ 9.6A, 10V
High continuous drain current of 18A at 25°C
Low input capacitance of 650pF @ 25V
High power dissipation capability of 57W at Tc
Product Advantages
Excellent performance for power switching and control applications
Compact and efficient D-Pak package
Robust and reliable design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 55V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 110mΩ @ 9.6A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss): 650pF @ 25V
Power Dissipation (Pd): 57W @ Tc
Quality and Safety Features
MOSFET technology for high reliability and robustness
RoHS non-compliant
Compatibility
Compatible with various power electronics and control applications
Application Areas
Power switching and control
Motor drives
Power supplies
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent performance characteristics for power switching and control
Compact and efficient D-Pak package
Robust and reliable design
Wide operating temperature range
High power dissipation capability
IRFR5505PBF MOSIR