Manufacturer Part Number
IRFR120NTRPBF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
100V Drain-Source Voltage
4A Continuous Drain Current
210mΩ On-Resistance
330pF Input Capacitance
48W Power Dissipation
-55°C to 175°C Operating Temperature
Product Advantages
Low On-Resistance for Efficient Power Switching
High Voltage and Current Handling Capability
Compact D-Pak Surface Mount Package
Key Technical Parameters
MOSFET Technology
Vds: 100V
Vgs (Max): ±20V
Rds(on) @ 5.6A, 10V: 210mΩ
Id (Continuous) @ 25°C: 9.4A
Ciss @ 25V: 330pF
Power Dissipation (Tc): 48W
Vgs(th) @ 250A: 4V
Quality and Safety Features
RoHS3 Compliant
D-Pak Packaging for Reliable Surface Mount Assembly
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Power supplies, motor drives, inverters, and other power electronics
Product Lifecycle
Current production model
Replacements and upgrades available from Infineon
Key Reasons to Choose this Product
Excellent power handling and efficiency with low on-resistance
Compact, reliable D-Pak surface mount package
Wide operating temperature range
RoHS compliance for use in modern electronics