IRFR120NTRLPBF - Infineon Technologies

Manufacturer Part Number

IRFR120NTRLPBF

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

RoHS3 Compliant

TO-252-3, DPak (2 Leads + Tab), SC-63 Package

HEXFET Series

Tape & Reel (TR) Packaging

Operating Temperature: -55°C to 175°C (TJ)

Drain to Source Voltage (Vdss): 100V

Maximum Gate-Source Voltage (Vgs): ±20V

Maximum On-State Resistance (Rds(on)): 210mΩ @ 5.6A, 10V

MOSFET (Metal Oxide) Technology

Continuous Drain Current (Id) @ 25°C: 9.4A (Tc)

Maximum Input Capacitance (Ciss): 330pF @ 25V

Maximum Power Dissipation: 48W (Tc)

N-Channel FET Type

Maximum Threshold Voltage (Vgs(th)): 4V @ 250A

Drive Voltage (Max Rds(on), Min Rds(on)): 10V

Maximum Gate Charge (Qg): 25nC @ 10V

Surface Mount Mounting Type

Product Advantages

High efficiency and performance

Wide operating temperature range

Robust and reliable design

Compact and space-saving package

Key Technical Parameters

Drain to Source Voltage (Vdss)

Gate-Source Voltage (Vgs)

On-State Resistance (Rds(on))

Continuous Drain Current (Id)

Input Capacitance (Ciss)

Power Dissipation (Max)

Threshold Voltage (Vgs(th))

Gate Charge (Qg)

Quality and Safety Features

RoHS3 Compliant

Suitable for harsh environments

Compatibility

Compatible with a wide range of electronic systems and applications

Application Areas

Power supplies

Motor drives

Switching circuits

Amplifiers

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High efficiency and performance

Wide operating temperature range

Robust and reliable design

Compact and space-saving package

RoHS3 compliant

Suitable for a variety of applications