Manufacturer Part Number
IRFR120ATM
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a single N-channel MOSFET transistor.
Product Features and Performance
100V Drain-to-Source Voltage
20V Maximum Gate-to-Source Voltage
200mOhm On-State Resistance at 4.2A Drain Current, 10V Gate-to-Source Voltage
4A Continuous Drain Current at 25°C Case Temperature
480pF Input Capacitance at 25V Drain-to-Source Voltage
5W Power Dissipation at 25°C Ambient Temperature, 32W at 25°C Case Temperature
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-state resistance for efficient power conversion
High voltage and current handling capabilities
Surface mount packaging for compact design
Key Technical Parameters
Drain-to-Source Voltage: 100V
Gate-to-Source Voltage: ±20V
On-State Resistance: 200mOhm
Continuous Drain Current: 8.4A
Input Capacitance: 480pF
Power Dissipation: 2.5W (Ambient), 32W (Case)
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
MOSFET technology for reliable operation
TO-252AA surface mount package
Compatibility
This MOSFET can be used in various power electronics applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power amplifiers
Product Lifecycle
This product is currently in production and available. Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
High voltage and current capability
Low on-state resistance for efficient power conversion
Surface mount package for compact design
Broad operating temperature range
Reliable MOSFET technology