Manufacturer Part Number
IRFP4868PBF
Manufacturer
Infineon Technologies
Introduction
High-performance power MOSFET transistor
Suitable for a wide range of power conversion and control applications
Product Features and Performance
Low on-resistance for high efficiency
Fast switching and low gate charge for high-frequency operation
High drain-source breakdown voltage for high-voltage applications
Robust avalanche capability for reliable operation
Low gate charge for high-speed switching
Product Advantages
Excellent thermal performance and power handling capabilities
Reliable and durable design for long-term use
Suitable for a variety of power conversion and control applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 300V
Maximum Gate-Source Voltage (Vgs(max)): ±20V
On-Resistance (Rds(on)): 32mΩ @ 42A, 10V
Continuous Drain Current (ID): 70A @ 25°C (Tc)
Input Capacitance (Ciss): 10,774pF @ 50V
Power Dissipation (Pd): 517W @ 25°C (Tc)
Quality and Safety Features
ROHS3 compliant
Designed for reliable and safe operation
Excellent thermal management capability
Compatibility
Suitable for a wide range of power conversion and control applications
Can be used in various industrial, automotive, and consumer electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Welding equipment
Industrial automation
Automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High efficiency and low power losses due to low on-resistance
Reliable and durable design for long-term use
Suitable for high-voltage, high-current, and high-frequency applications
Excellent thermal performance and power handling capabilities
Compatibility with a wide range of power conversion and control applications
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