IRFP4868PBF - Infineon Technologies

Manufacturer Part Number

IRFP4868PBF

Manufacturer

Infineon Technologies

Introduction

High-performance power MOSFET transistor

Suitable for a wide range of power conversion and control applications

Product Features and Performance

Low on-resistance for high efficiency

Fast switching and low gate charge for high-frequency operation

High drain-source breakdown voltage for high-voltage applications

Robust avalanche capability for reliable operation

Low gate charge for high-speed switching

Product Advantages

Excellent thermal performance and power handling capabilities

Reliable and durable design for long-term use

Suitable for a variety of power conversion and control applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 300V

Maximum Gate-Source Voltage (Vgs(max)): ±20V

On-Resistance (Rds(on)): 32mΩ @ 42A, 10V

Continuous Drain Current (ID): 70A @ 25°C (Tc)

Input Capacitance (Ciss): 10,774pF @ 50V

Power Dissipation (Pd): 517W @ 25°C (Tc)

Quality and Safety Features

ROHS3 compliant

Designed for reliable and safe operation

Excellent thermal management capability

Compatibility

Suitable for a wide range of power conversion and control applications

Can be used in various industrial, automotive, and consumer electronics applications

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Welding equipment

Industrial automation

Automotive electronics

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High efficiency and low power losses due to low on-resistance

Reliable and durable design for long-term use

Suitable for high-voltage, high-current, and high-frequency applications

Excellent thermal performance and power handling capabilities

Compatibility with a wide range of power conversion and control applications