Manufacturer Part Number
IRFP4768PBF
Manufacturer
Infineon Technologies
Introduction
High-performance HEXFET N-channel power MOSFET
Product Features and Performance
High power density and low on-resistance
Optimized for high-frequency switching applications
Low gate charge and input capacitance
Rugged and reliable design
Suitable for high-voltage applications
Product Advantages
Excellent switching performance
High power handling capability
Efficient thermal management
Robust and durable construction
Key Technical Parameters
Drain to Source Voltage (Vdss): 250V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 17.5mΩ @ 56A, 10V
Continuous Drain Current (Id): 93A @ 25°C (Tc)
Input Capacitance (Ciss): 10880pF @ 50V
Power Dissipation (Tc): 520W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 175°C)
Robust TO-247AC package for reliable performance
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power converters
Product Lifecycle
Current production model, with no known plans for discontinuation
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Excellent switching performance and efficiency
High power handling and reliability
Suitable for high-voltage, high-current applications
Robust and durable design for demanding environments
Comprehensive technical support and product availability from Infineon