Manufacturer Part Number
IRFP4668PBF
Manufacturer
Infineon Technologies
Introduction
The IRFP4668PBF is a high-performance N-channel power MOSFET from Infineon Technologies, designed for use in a variety of high-power applications.
Product Features and Performance
High current handling capability up to 130A continuous drain current at 25°C
Low on-resistance of 9.7mΩ at 10V gate-source voltage
Wide operating temperature range of -55°C to 175°C
High drain-source voltage rating of 200V
Fast switching speed and low gate charge of 241nC at 10V
Product Advantages
Excellent thermal management due to low on-resistance
Suitable for high-power, high-efficiency applications
Robust design and high reliability
Easy to drive and integrate into power electronics systems
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id) at 25°C: 130A
On-Resistance (Rds(on)): 9.7mΩ at 10V, 81A
Input Capacitance (Ciss): 10720pF at 50V
Power Dissipation (Tc): 520W
Quality and Safety Features
RoHS3 compliant
Manufactured in accordance with high-quality standards
Compatibility
The IRFP4668PBF is compatible with a wide range of power electronic applications, including:
Switching power supplies
Motor drives
Inverters
Automotive electronics
Industrial automation and control systems
Application Areas
High-power, high-efficiency power conversion
Electric vehicle and hybrid-electric vehicle power systems
Industrial and renewable energy applications
Uninterruptible power supplies (UPS)
Product Lifecycle
The IRFP4668PBF is an active and widely used product in Infineon's portfolio. There are no plans for discontinuation, and replacement or upgrade options are available if required.
Key Reasons to Choose This Product
Excellent performance characteristics, including high current handling, low on-resistance, and fast switching
Robust and reliable design for demanding applications
Broad compatibility and suitability for a wide range of power electronics systems
Backed by Infineon's reputation for quality and innovation in semiconductor technologies