Manufacturer Part Number
IRFB3307ZPBF
Manufacturer
Infineon Technologies
Introduction
The IRFB3307ZPBF is a high-performance N-channel MOSFET transistor from Infineon Technologies. It is part of the HEXFET series and designed for various power control and power conversion applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 75V
Low on-resistance (RDS(on)) of 5.8mΩ at 75A and 10V
Continuous Drain Current (ID) of 120A at 25°C case temperature
Wide Operating Temperature Range of -55°C to 175°C
Low Input Capacitance (Ciss) of 4750pF at 50V
High Power Dissipation of 230W at 25°C case temperature
Product Advantages
Excellent efficiency and low power loss due to low on-resistance
Robust design and wide operating temperature range
Suitable for high-current and high-power applications
Key Technical Parameters
N-Channel MOSFET Transistor
Vgs(th) (Max): 4V at 150A
Drive Voltage (Max RDS(on), Min RDS(on)): 10V
Gate Charge (Qg) (Max): 110nC at 10V
Quality and Safety Features
RoHS3 compliant
TO-220AB package
Compatibility
Suitable for various power control and power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
This is an active product and is not nearing discontinuation.
Replacement or upgrade products may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, high current handling, and wide temperature range
Robust and reliable design suitable for demanding applications
Part of the well-established HEXFET series from a reputable manufacturer, Infineon Technologies
RoHS3 compliance for environmental considerations
Broad compatibility and suitability for a wide range of power electronics applications
IRFB3307ZIR