Manufacturer Part Number
IRFB3407ZPBF
Manufacturer
Infineon Technologies
Introduction
The IRFB3407ZPBF is a high-performance N-channel power MOSFET transistor from Infineon Technologies. It is designed for a wide range of power electronics applications.
Product Features and Performance
High current capability up to 120A continuous drain current
Low on-resistance of 6.4 mΩ max. at 10V gate-source voltage
Fast switching with a gate charge of 110 nC max. at 10V
Wide operating temperature range of -55°C to 175°C
High drain-source voltage rating of 75V
Product Advantages
Excellent power efficiency due to low on-resistance
Efficient heat dissipation for high power density designs
Reliable operation across wide temperature range
Fast switching for high-frequency power conversion
Key Technical Parameters
Drain-Source Voltage (Vdss): 75V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 6.4 mΩ max. @ 75A, 10V
Continuous Drain Current (Id): 120A @ 25°C
Input Capacitance (Ciss): 4750 pF max. @ 50V
Power Dissipation (Tc): 230W
Quality and Safety Features
RoHS3 compliant
Housed in a rugged TO-220AB package
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and power inverters
Application Areas
Industrial equipment
Automotive electronics
Renewable energy systems
Power conversion and control
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Reliable operation across a wide temperature range
Fast switching capability for high-frequency power conversion
Robust design and high-quality manufacturing
Broad compatibility with various power electronics applications
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