Manufacturer Part Number
IRFB3306PBF
Manufacturer
Infineon Technologies
Introduction
The IRFB3306PBF is a high-performance N-channel power MOSFET transistor in a TO-220 package, designed for a wide range of power conversion and control applications.
Product Features and Performance
60V drain-source voltage
120A continuous drain current at 25°C
2mΩ maximum on-resistance at 75A and 10V gate-source voltage
-55°C to 175°C operating temperature range
High input capacitance of 4520pF at 50V
Low gate charge of 120nC at 10V
230W maximum power dissipation at 25°C
Product Advantages
Excellent performance in high-power switching applications
Efficient power conversion with low on-resistance
Reliable operation over a wide temperature range
Compact TO-220 package for easy integration
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.2mΩ
Continuous Drain Current (Id): 120A
Input Capacitance (Ciss): 4520pF
Power Dissipation (Ptot): 230W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-quality standards
Compatibility
Compatible with a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power amplifiers
Industrial automation and control
Product Lifecycle
This product is an active and widely used component
Replacements and upgrades may be available from Infineon or other manufacturers
Several Key Reasons to Choose This Product
Exceptional performance and efficiency in high-power switching applications
Reliable operation over a wide temperature range
Compact and easy-to-integrate TO-220 package
Backed by Infineon's high-quality manufacturing and design
Suitable for a wide range of power conversion and control applications
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