Manufacturer Part Number
IRFB31N20DPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with low on-resistance, high frequency operation, and enhanced avalanche capability.
Product Features and Performance
Optimized for high-frequency, high-efficiency switching applications
Low on-resistance for low conduction losses
Enhanced avalanche capability for robustness
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent efficiency in switching applications
High reliability and ruggedness
Suitable for various power conversion and control applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 200V
Maximum Gate-Source Voltage (Vgs): ±30V
On-state Resistance (Rds(on)): 82mΩ @ 18A, 10V
Continuous Drain Current (Id): 31A @ 25°C
Input Capacitance (Ciss): 2370pF @ 25V
Power Dissipation: 3.1W (Ta), 200W (Tc)
Quality and Safety Features
Robust TO-220AB package for high power handling
Certified for industrial and automotive applications
Compatibility
Suitable for use in various power conversion and control circuits
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
This product is an active and widely used part in the Infineon portfolio.
Replacement or upgrade options are available from Infineon's product lineup.
Key Reasons to Choose This Product
Excellent efficiency and low conduction losses due to low on-resistance
Robust design and high reliability for demanding applications
Wide operating temperature range for versatile usage
Suitable for high-frequency, high-efficiency switching applications
Compatibility with various power conversion and control circuits
