Manufacturer Part Number
IRFB3206PBF
Manufacturer
Infineon Technologies
Introduction
The IRFB3206PBF is a high-performance N-channel MOSFET transistor from Infineon Technologies. It is part of the HEXFET series and designed for a wide range of power management and control applications.
Product Features and Performance
High current handling capability up to 120A continuous drain current at 25°C
Low on-resistance of 3mΩ at 75A, 10V
Fast switching speed and low gate charge of 170nC at 10V
Wide operating temperature range of -55°C to 175°C
Robust design and high power dissipation of up to 300W at 25°C
Product Advantages
Excellent efficiency and thermal performance
Reliable and durable operation
Versatile for various power electronics applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3mΩ @ 75A, 10V
Continuous Drain Current (Id): 120A @ 25°C
Power Dissipation (Pd): 300W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with wide operating temperature range
Compatibility
Through-hole mounting in TO-220AB package
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power converters
Product Lifecycle
Currently available
No plans for discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power conversion
Fast switching and low gate charge for high-frequency applications
Robust design and wide operating temperature range for reliable performance
Versatile and compatible with various power electronics designs
IRFB3206GIR