Manufacturer Part Number
IRFB3006PBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor
Designed for high-power, high-frequency switching applications
Product Features and Performance
Wide operating temperature range: -55°C to 175°C
High drain-source voltage: 60V
Low on-resistance: 2.5mΩ @ 170A, 10V
High continuous drain current: 195A @ 25°C
Low input capacitance: 8970pF @ 50V
High power dissipation: 375W
Product Advantages
Excellent power switching performance
High efficiency and reliability
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs Max): ±20V
On-Resistance (Rds(on) Max): 2.5mΩ
Drain Current (Id Continuous): 195A
Quality and Safety Features
RoHS3 compliant
Robust TO-220AB package
Compatibility
Suitable for various power supply, motor control, and other high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Welding equipment
Industrial controls
Product Lifecycle
This product is an actively supported and available MOSFET from Infineon Technologies.
Key Reasons to Choose This Product
Excellent power handling capabilities
High efficiency and low on-resistance
Wide operating temperature range
Robust and reliable TO-220AB package
Suitable for a variety of high-power, high-frequency applications