Manufacturer Part Number
IRFB260NPBF
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel HEXFET power MOSFET
Product Features and Performance
High power density and low on-resistance
Ultra-low gate charge for high-speed switching
Suitable for high-frequency, high-power switching applications
Robust and reliable design
Product Advantages
Excellent switching performance
Low conduction losses
High power handling capability
Reliable and durable
Key Technical Parameters
Drain to Source Voltage (Vdss): 200 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 40 mΩ
Continuous Drain Current (Id): 56 A
Input Capacitance (Ciss): 4220 pF
Power Dissipation (Tc): 380 W
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 175°C
Compatibility
Universal compatibility with various high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Industrial control systems
Product Lifecycle
Currently in production
No planned discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent switching performance for high-frequency, high-power applications
Low conduction losses for improved efficiency
High power handling capability for demanding applications
Reliable and durable design for long-term reliable operation
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