IRF9362TRPBF - Infineon Technologies

Manufacturer Part Number

IRF9362TRPBF

Manufacturer

Infineon Technologies

Introduction

This product is a dual P-channel MOSFET transistor in a surface-mount 8-SOIC package.

Product Features and Performance

30V drain-to-source voltage (Vdss)

21mΩ maximum on-resistance (Rds(on)) at 8A and 10V

8A continuous drain current (Id) at 25°C

1300pF maximum input capacitance (Ciss) at 25V

4V maximum gate threshold voltage (Vgs(th)) at 25A

39nC maximum gate charge (Qg) at 10V

Operates over a wide temperature range of -55°C to 150°C

Product Advantages

Low on-resistance for efficient power switching

Logic-level gate for easy driving

Suitable for a variety of power management and control applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

On-Resistance (Rds(on)): 21mΩ

Continuous Drain Current (Id): 8A

Input Capacitance (Ciss): 1300pF

Gate Threshold Voltage (Vgs(th)): 2.4V

Gate Charge (Qg): 39nC

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

This MOSFET is compatible with a wide range of power management and control applications.

Application Areas

Power supplies

Motor drives

Lighting controls

Automotive electronics

Industrial automation

Product Lifecycle

This product is an active and widely available part. Infineon Technologies continues to manufacture and support the IRF9362 MOSFET.

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Suitable for logic-level gate drive circuits

Wide operating temperature range

RoHS3 compliance for environmental considerations

Reliable performance in various power management and control applications