Manufacturer Part Number
IRF9389TRPBF
Manufacturer
Infineon Technologies
Introduction
The IRF9389TRPBF is a P-channel power MOSFET from Infineon Technologies, part of the HEXFET series.
Product Features and Performance
Supports up to 30V drain-to-source voltage
Low on-resistance of 27mΩ @ 6.8A, 10V
Continuous drain current of 6.8A at 25°C
Input capacitance of 398pF @ 15V
Logic-level gate with a threshold voltage of 2.3V @ 10A
Gate charge of 14nC @ 10V
Product Advantages
Excellent power handling and efficiency
Low on-resistance for low power losses
Logic-level gate for easy drive circuit design
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 6.8A @ 25°C, 4.6A
On-Resistance (Rds(on)): 27mΩ @ 6.8A, 10V
Input Capacitance (Ciss): 398pF @ 15V
Gate Threshold Voltage (Vgs(th)): 2.3V @ 10A
Gate Charge (Qg): 14nC @ 10V
Quality and Safety Features
RoHS3 compliant
8-SOIC package for surface mount assembly
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Industrial controls
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available from Infineon
Key Reasons to Choose This Product
Excellent power handling and efficiency
Low on-resistance for low power losses
Logic-level gate for easy drive circuit design
Wide operating temperature range
RoHS3 compliance for environmental responsibility
IRF9389IR