Manufacturer Part Number
IRF9358TRPBF
Manufacturer
Infineon Technologies
Introduction
P-channel power MOSFET in HEXFET power package
Product Features and Performance
2 P-channel MOSFET devices in one package
Low on-resistance of 16.3 mOhm
High current rating up to 9.2A
Wide operating temperature range of -55°C to 150°C
Low gate charge of 38 nC
Logic level gate for ease of use
Product Advantages
High power density
Efficient power switching
Reliable and robust design
Easy to use
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Continuous Drain Current (Id) @ 25°C: 9.2A
On-Resistance (Rds(on)) @ 9.2A, 10V: 16.3 mOhm
Input Capacitance (Ciss) @ 25V: 1740 pF
Threshold Voltage (Vgs(th)) @ 25A: 2.4V
Quality and Safety Features
RoHS3 compliant
MOSFET technology for high reliability
Compatibility
Suitable for a wide range of power switching and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Industrial controls
Product Lifecycle
Currently available
No known discontinuation or replacement plans
Several Key Reasons to Choose This Product
High current handling capability
Low on-resistance for efficient power switching
Wide operating temperature range for versatile applications
Logic level gate for easy and direct control
Robust and reliable design for long-term use