Manufacturer Part Number
IRF40H210
Manufacturer
Infineon Technologies
Introduction
The IRF40H210 is a high-performance N-Channel MOSFET transistor from Infineon Technologies, designed for a wide range of power management and control applications.
Product Features and Performance
Robust MOSFET design with low on-resistance (RDS(on)) of 1.7 mΩ
High current capability of 100A continuous drain current (ID)
Wide operating temperature range of -55°C to 150°C
Fast switching characteristics with low input capacitance (Ciss) of 5406 pF
High power dissipation capability of 125W
Product Advantages
Excellent efficiency and low power losses
Reliable and durable performance
Versatile application in various power electronics systems
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40V
Gate-to-Source Voltage (VGS): ±20V
Threshold Voltage (VGS(th)): 3.7V
Gate Charge (Qg): 152 nC
Quality and Safety Features
Robust design for high reliability and long life
Complies with industry safety standards
Compatibility
Suitable for use in a wide range of power electronics applications, including motor drives, power supplies, and industrial automation systems.
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Industrial automation and control
Product Lifecycle
The IRF40H210 is an active and widely used product in Infineon's MOSFET portfolio. There are no immediate plans for discontinuation, and suitable replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
Excellent power efficiency and low power losses
High current handling capability and reliable performance
Versatile application across various power electronics systems
Robust design and long operational life
Compliance with industry safety standards
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