Manufacturer Part Number
IRF3808PBF
Manufacturer
Infineon Technologies
Introduction
The IRF3808PBF is a high-performance, N-channel power MOSFET transistor suitable for a wide range of power electronics applications.
Product Features and Performance
High drain current capacity up to 140A (continuous) at 25°C
Low on-resistance of 7mOhm at 82A, 10V
Wide operating temperature range of -55°C to 175°C
High input capacitance of 5310pF at 25V
High power dissipation up to 330W at 25°C
Product Advantages
Excellent power handling and efficiency
Reliable operation across a wide temperature range
Suitable for high-current and high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 75V
Gate-Source Voltage (Vgs) Max: ±20V
Threshold Voltage (Vgs(th)): 4V @ 250A
Input Capacitance (Ciss): 5310pF @ 25V
Gate Charge (Qg): 220nC @ 10V
Quality and Safety Features
RoHS3 compliant
TO-220AB package for reliable heat dissipation
Compatibility
Compatible with a wide range of power electronic circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
High-current/high-power switching applications
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable operation across a wide temperature range
Suitable for high-current and high-power applications
RoHS3 compliance for environmentally-friendly use
Wide compatibility and suitability for various power electronics applications