Manufacturer Part Number
IRF40B207
Manufacturer
Infineon Technologies
Introduction
The IRF40B207 is a high-performance N-channel power MOSFET suitable for a wide range of power conversion and control applications.
Product Features and Performance
Capable of handling high drain current up to 95A at 25°C case temperature
Low on-resistance (RDS(on)) of 4.5mΩ at 10V gate drive
Fast switching capability with low gate charge (Qg) of 68nC at 10V
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power efficiency due to low conduction and switching losses
Robust design with high avalanche energy rating
Suitable for high-frequency, high-current switching applications
Key Technical Parameters
Drain-Source Voltage (VDS): 40V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 4.5mΩ
Continuous Drain Current (ID): 95A at 25°C case temperature
Input Capacitance (Ciss): 2110pF
Power Dissipation (PD): 83W at 25°C case temperature
Quality and Safety Features
ROHS3 compliant
Qualified to military and automotive standards
Compatibility
This MOSFET is compatible with various power electronics applications, including:
Switched-mode power supplies
Motor drives
Inverters
Converters
Application Areas
Industrial power electronics
Automotive power systems
Renewable energy systems
Consumer electronics
Product Lifecycle
The IRF40B207 is an active product and is not nearing discontinuation. Replacement or upgrade options are available from Infineon.
Key Reasons to Choose This Product
High power handling capability and efficiency due to low RDS(on) and fast switching
Robust and reliable design suitable for demanding applications
Wide operating temperature range for versatile use
Compatibility with various power electronics systems
Availability of replacement and upgrade options from the manufacturer