IR21844STRPBF - Infineon Technologies

Manufacturer Part Number

IR21844STRPBF

Manufacturer

Infineon Technologies

Introduction

High-performance IGBT/MOSFET gate driver IC

Optimized for industrial, home appliance and renewable energy applications

Product Features and Performance

Dual-channel gate driver for synchronous half-bridge configurations

Capable of driving IGBT or N-Channel MOSFET power devices

Supports high-side voltage up to 600V

Fast rise and fall times (40ns/20ns typ.)

High peak source/sink current (1.9A/2.3A)

Wide supply voltage range (10V to 20V)

Logic-level compatible inputs (0.8V/2.7V)

Undervoltage lockout (UVLO) protection

Shoot-through protection

Product Advantages

Enables high-efficiency, high-power density power conversion

Compact 14-SOIC package for space-constrained designs

Robust protection features ensure reliable operation

Key Technical Parameters

Supply Voltage: 10V to 20V

Channels: 2

Driver Type: IGBT, N-Channel MOSFET

Rise/Fall Time: 40ns/20ns (typical)

Peak Output Current: 1.9A source, 2.3A sink

High-Side Voltage Max: 600V

Operating Temperature: -40°C to +150°C

Quality and Safety Features

ROHS3 compliant

Protections: UVLO, shoot-through

Compatibility

Suitable for industrial, home appliance, and renewable energy applications

Application Areas

Motor drives

Power supplies

Inverters

Converters

Product Lifecycle

Currently in production

Replacement/upgrade options available

Key Reasons to Choose This Product

Optimized for high-efficiency, high-power density power conversion

Robust protection features for reliable operation

Compact package for space-constrained designs

Wide operating temperature range (-40°C to +150°C)

Logic-level compatible inputs for easy integration