Manufacturer Part Number
IR2213STRPBF
Manufacturer
Infineon Technologies
Introduction
The IR2213STRPBF is a powerful gate driver specifically designed for power management applications, capable of driving IGBT and N-Channel MOSFETs in a half-bridge configuration.
Product Features and Performance
Driven configuration: Half-Bridge
Independent channel type
Supports two drivers
Compatible with IGBT and N-Channel MOSFET gate types
Supply voltage ranges from 12V to 20V
Logical input thresholds: VIH = 9.5V, VIL = 6V
Peak output current: 2A source, 2.5A sink
Non-inverting input type
Maximum high side voltage (Bootstrap): 1200V
Typical rise time: 25ns
Typical fall time: 17ns
Maximum operating temperature: 125°C (TJ)
Product Advantages
High voltage capability for broader application use
Fast switching times enhance performance in high-frequency applications
Dual independent channels allow flexibility in control
Key Technical Parameters
Number of Drivers: 2
Voltage Supply: 12V ~ 20V
Logic Voltage VIH: 9.5V, VIL: 6V
Current Peak Output (Source, Sink): 2A, 2.5A
High Side Voltage Max (Bootstrap): 1200V
Rise / Fall Time (Typ): 25ns, 17ns
Quality and Safety Features
Robust thermal management supports operating temperatures up to 125°C
High side voltage tolerance up to 1200V for safe operation under high voltage conditions
Compatibility
Compatible with a range of IGBT and N-Channel MOSFET devices
Suitable for various half-bridge drive applications
Application Areas
Motor drives
Inverter circuits
Switch mode power supplies
Product Lifecycle
Currently in active production status
Not nearing discontinuation, with ongoing support and availability
Several Key Reasons to Choose This Product
High voltage capability (1200V) for high power applications
Dual independent driving channels offer design flexibility
Fast switching capabilities (rise time 25ns, fall time 17ns) improve efficiency
Robust design ensures performance stability up to 125°C
Available in industry-standard 16-SOIC package for easy integration