IR21844S - Infineon Technologies

Manufacturer Part Number

IR21844S

Manufacturer

Infineon Technologies

Introduction

High Voltage Half-Bridge Driver with Integrated Bootstrap Diode

Product Features and Performance

Dual output gate driver

Capable of driving N-Channel MOSFET and IGBT

Integrated bootstrap diode

Under-voltage lockout for both channels

3V and 5V logic compatible

Independent high and low side channels

Product Advantages

High voltage capability up to 600V

High peak current outputs

Efficient operation with fast rise and fall times

Tolerant to negative transient voltage

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Synchronous

Number of Drivers: 2

Gate Type: IGBT, N-Channel MOSFET

Voltage - Supply: 10V to 20V

Logic Voltage - VIL, VIH: 0.8V, 2.7V

Current - Peak Output (Source, Sink): 1.9A, 2.3A

High Side Voltage - Max (Bootstrap): 600V

Rise / Fall Time: 40ns, 20ns

Operating Temperature: -40°C to 150°C

Quality and Safety Features

Under-voltage lockout protection

Resilient to negative transients

Extended temperature range for high reliability

Compatibility

Compatible with standard logic levels (3.3V and 5V systems)

Compatible with a wide range of IGBTs and MOSFETs

Designed for surface mount technology (SMT)

Application Areas

DC to AC power inverters

Motor drives

Switch Mode Power Supplies (SMPS)

Class D amplifiers

Product Lifecycle

Obsolete

Potential for limited availability

Alternative replacements or upgrades may be required

Several Key Reasons to Choose This Product

Integrated bootstrap diode simplifies circuit design

High-voltage operation is ideal for power applications

Dual channel output for flexible design configurations

Fast switching times for improved efficiency

Robust design for higher operating temperatures

Optimized for easy PCB mounting with standard 14-SOIC package