IR2117STRPBF - Infineon Technologies

Manufacturer Part Number

IR2117STRPBF

Manufacturer

Infineon Technologies

Introduction

The IR2117STRPBF is a high-side gate driver specifically designed for power management applications. It is suitable for driving IGBTs and N-Channel MOSFETs.

Product Features and Performance

Single high-side driver configuration

Compatible with IGBT and N-Channel MOSFET gates

Non-inverting input type

Supply Voltage between 10V and 20V

Supports logic levels of 6V (VIL) and 9.5V (VIH)

Peak output currents of 250mA (source) and 500mA (sink)

High side voltage up to 600V (Bootstrap)

Fast rise and fall times of 80ns and 40ns respectively

Operating temperature range from -40°C to 150°C

Product Advantages

Efficient gate driving capabilities for high-power applications

High thermal and electrical stress tolerance

Compact 8-SOIC package ideal for space-constrained applications

Key Technical Parameters

Voltage Supply: 10V ~ 20V

Logic Voltage VIL, VIH: 6V, 9.5V

Current Peak Output (Source, Sink): 250mA, 500mA

High Side Voltage Max (Bootstrap): 600 V

Rise / Fall Time (Typ): 80ns, 40ns

Operating Temperature: -40°C ~ 150°C

Quality and Safety Features

Robust thermal performance with an operational temperature range of -40°C to 150°C

Designed to handle high voltage levels safely up to 600V

Compatibility

Can be used with a wide range of high-side IGBTs and N-Channel MOSFETs

Application Areas

Motor Drives

Power Supply Units

Inverters

High-Reliability Power Management Systems

Product Lifecycle

Status: Active

Not currently nearing discontinuation

Future replacements or upgrades should be verified with manufacturer

Several Key Reasons to Choose This Product

High reliability and performance in extreme temperature conditions

Supports a broad range of high-side power devices

High peak output currents enable effective switching

Fast transit times reduce power losses during switching

Easy integration into existing designs with standard 8-SOIC packaging