Manufacturer Part Number
IR2121PBF
Manufacturer
Infineon Technologies
Introduction
High-speed, high-current gate driver for IGBT and N-channel MOSFET power switches
Product Features and Performance
Capable of driving IGBT and N-channel MOSFET power switches
High-speed switching with rise/fall times of 43ns and 26ns respectively
High peak output current of 1.6A source and 3.3A sink
Wide supply voltage range of 12V to 18V
Operating temperature range of -40°C to 150°C
Product Advantages
Optimized for high-frequency, high-power applications
Robust and reliable performance
Efficient driving of power switches
Key Technical Parameters
Supply voltage range: 12V to 18V
Logic voltage levels: 0.8V (VIL), 2.2V (VIH)
Single channel configuration
Through-hole mounting
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Compatible with IGBT and N-channel MOSFET power switches
Application Areas
Suitable for a wide range of high-frequency, high-power applications such as:
- Motor drives
- Switched-mode power supplies
- Inverters
- Welding equipment
Product Lifecycle
This product is currently in production and actively supported by the manufacturer.
Replacement or upgrade options may be available from the manufacturer or third-party suppliers.
Several Key Reasons to Choose This Product
Optimized for high-frequency, high-power applications with its fast switching speeds and high output current capabilities.
Robust and reliable performance, ensuring safe and efficient operation of power switches.
Wide operating temperature range, making it suitable for a variety of environmental conditions.
Compatibility with both IGBT and N-channel MOSFET power switches, offering versatility in design.
RoHS3 compliance, ensuring environmentally responsible and compliant usage.
IR2122SIR