IR2125PBF - Infineon Technologies

Manufacturer Part Number

IR2125PBF

Manufacturer

Infineon Technologies

Introduction

High-side gate driver designed to drive IGBTs and N-Channel MOSFETs

Product Features and Performance

Drives high side IGBTs and N-Channel MOSFETs

Single channel output

Bootstrap operation capable of up to 500 V

High peak output current capacity (source: 1.6A, sink: 3.3A)

Fast rise and fall times (43ns/26ns)

Protection against over-voltage conditions

Wide supply voltage range (0V to 18V)

High operating temperature range (-40°C to 150°C)

Product Advantages

Reliable for high voltage applications

Robust against harsh environments

Integrated under-voltage lockout feature for system safety

Strong drive capability for fast switching

Key Technical Parameters

Driven Configuration: High-Side

Number of Drivers: 1

Voltage - Supply (VCC/VDD): 0V ~ 18V

Logic Voltage - VIL, VIH: 0.8V, 2.2V

Current - Peak Output (Source, Sink): 1.6A, 3.3A

High Side Voltage - Max (Bootstrap): 500 V

Rise / Fall Time (Typical): 43ns / 26ns

Quality and Safety Features

Under-voltage lockout (UVLO)

Over-voltage protection (OVP)

Thermal shutdown

Tolerant to negative transient voltage

Compatibility

Compatible with IGBT and N-Channel MOSFET gates

Application Areas

Motor drives

Switch mode power supplies (SMPS)

Power conversion systems

Inverters

Industrial computing

Product Lifecycle

Product Status: Active

Not nearing discontinuation

Replacements or upgrades may be available

Several Key Reasons to Choose This Product

Highly integrated high-side driver reduces system complexity

Reinforced isolation between low and high voltage sides

Ease of use with non-inverting input

Impactful for high-frequency power electronics

Cost-effective and industry-proven performance

Reliable operation in extended temperature ranges