Manufacturer Part Number
IR2125PBF
Manufacturer
Infineon Technologies
Introduction
High-side gate driver designed to drive IGBTs and N-Channel MOSFETs
Product Features and Performance
Drives high side IGBTs and N-Channel MOSFETs
Single channel output
Bootstrap operation capable of up to 500 V
High peak output current capacity (source: 1.6A, sink: 3.3A)
Fast rise and fall times (43ns/26ns)
Protection against over-voltage conditions
Wide supply voltage range (0V to 18V)
High operating temperature range (-40°C to 150°C)
Product Advantages
Reliable for high voltage applications
Robust against harsh environments
Integrated under-voltage lockout feature for system safety
Strong drive capability for fast switching
Key Technical Parameters
Driven Configuration: High-Side
Number of Drivers: 1
Voltage - Supply (VCC/VDD): 0V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1.6A, 3.3A
High Side Voltage - Max (Bootstrap): 500 V
Rise / Fall Time (Typical): 43ns / 26ns
Quality and Safety Features
Under-voltage lockout (UVLO)
Over-voltage protection (OVP)
Thermal shutdown
Tolerant to negative transient voltage
Compatibility
Compatible with IGBT and N-Channel MOSFET gates
Application Areas
Motor drives
Switch mode power supplies (SMPS)
Power conversion systems
Inverters
Industrial computing
Product Lifecycle
Product Status: Active
Not nearing discontinuation
Replacements or upgrades may be available
Several Key Reasons to Choose This Product
Highly integrated high-side driver reduces system complexity
Reinforced isolation between low and high voltage sides
Ease of use with non-inverting input
Impactful for high-frequency power electronics
Cost-effective and industry-proven performance
Reliable operation in extended temperature ranges
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IR2125STRPBFInfineon TechnologiesIC GATE DRVR HIGH-SIDE 16SOIC