Manufacturer Part Number
IR2117STR
Manufacturer
infineon-technologies
Introduction
The IR2117STR is a high-voltage, high-speed power MOSFET and IGBT driver with a single channel. It is designed to provide efficient and reliable gate driving for power semiconductor devices in various power conversion applications.
Product Features and Performance
Supports IGBT and N-Channel MOSFET gate driving
Operating voltage range: 10V to 20V
Peak output current: 250mA source, 500mA sink
High-side voltage up to 600V
Fast rise and fall times: 80ns and 40ns respectively
Wide operating temperature range: -40°C to 150°C
Product Advantages
Reliable and efficient gate driving for power semiconductors
Compact surface mount package
Suitable for a wide range of power conversion applications
Key Reasons to Choose This Product
Robust and high-performance gate driver solution
Optimized for driving IGBT and MOSFET devices
Wide operating voltage and temperature range
Compact and space-saving package
Quality and Safety Features
Designed and manufactured to Infineon's high-quality standards
Robust thermal and overcurrent protection features
Compatibility
The IR2117STR is compatible with a variety of IGBT and N-Channel MOSFET devices used in power conversion applications.
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Uninterruptible power supplies (UPS)
Solar inverters
Industrial automation and control systems
Product Lifecycle
The IR2117STR is an obsolete product, meaning it is no longer in active production. Customers should contact our website's sales team for information on equivalent or alternative gate driver solutions that may be available.
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