Manufacturer Part Number
IR2102STRPBF
Manufacturer
Infineon Technologies
Introduction
Infineon's IR2102STRPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver with independent high and low-side references, suitable for half-bridge and other power conversion topologies.
Product Features and Performance
Operates from 10V to 20V supply voltage
Independent high-side and low-side MOSFET/IGBT drivers
Capable of driving both N-channel MOSFETs and IGBTs
Maximum high-side voltage of 600V
Fast 100ns rise time and 50ns fall time
High peak output current of 210mA source and 360mA sink
Undervoltage lockout (UVLO) on both channels
Deadtime control for highand low-side outputs
Fault protection with automatic reset
Product Advantages
Simplifies half-bridge and other power conversion circuit designs
Enables high-speed, high-voltage switching with reliable protection features
Versatile compatibility with both MOSFETs and IGBTs
Key Technical Parameters
10V ~ 20V supply voltage range
-40°C ~ 150°C operating temperature range
8-SOIC package
Quality and Safety Features
RoHS3 compliant
Provides protection against undervoltage lockout, short-circuit, and overcurrent
Compatibility
Suitable for use with a wide range of N-channel MOSFETs and IGBTs in half-bridge and other power conversion topologies.
Application Areas
Switch-mode power supplies
Motor drives
Induction heating
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation and control systems
Product Lifecycle
The IR2102STRPBF is an actively supported product in Infineon's portfolio. Replacement or upgrade options may be available in the future as technology advances.
Key Reasons to Choose This Product
Reliable, high-performance gate driver for high-voltage, high-speed power conversion applications
Versatile compatibility with both MOSFETs and IGBTs
Robust protection features to ensure safe and reliable operation
Simplifies circuit design and enables high-efficiency power conversion
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