Manufacturer Part Number
IR2102PBF
Manufacturer
Infineon Technologies
Introduction
The IR2102PBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is designed to drive a wide range of power MOSFETs and IGBTs in half-bridge or full-bridge configurations.
Product Features and Performance
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage Supply: 10V ~ 20V
Logic Voltage VIL, VIH: 0.8V, 3V
Current Peak Output (Source, Sink): 210mA, 360mA
Input Type: Inverting
High Side Voltage Max (Bootstrap): 600 V
Rise / Fall Time (Typ): 100ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Product Advantages
Capable of driving a wide range of power MOSFETs and IGBTs
Independent high and low side referenced output channels
High-speed and high-voltage operation
Wide operating temperature range
Key Reasons to Choose This Product
Versatile and reliable power driver solution
Suitable for a variety of power electronics applications
Efficient and cost-effective design
Backed by Infineon's industry-leading expertise
Quality and Safety Features
Robust design for reliable operation
Meets industry safety and regulatory standards
Compatibility
Widely compatible with various power MOSFET and IGBT devices
Application Areas
Suitable for use in power electronics, motor drives, and industrial control systems
Product Lifecycle
The IR2102PBF is an obsolete product, meaning it is no longer being manufactured. However, there are equivalent or alternative models available from Infineon Technologies that may be suitable replacements. Customers are advised to contact our website's sales team for more information on the available options.
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