Manufacturer Part Number
IR2101STRPBF
Manufacturer
Infineon Technologies
Introduction
The IR2101STRPBF is a high-power, half-bridge driver IC designed for efficient power management and gate driving solutions.
Product Features and Performance
Independent channel half-bridge driver configuration
Efficient driving of IGBT and N-Channel MOSFET gates
High side voltage capability up to 600V for bootstrap operations
Fast rise and fall times of 100ns and 50ns respectively
Wide operating supply voltage range of 10V to 20V
Product Advantages
High peak output current capability with 210mA source and 360mA sink
Support for high temperature operation up to 150°C
Non-inverting input simplifies signal processing
Key Technical Parameters
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage Supply: 10V ~ 20V
Logic Voltage VIL, VIH: 0.8V, 3V
Current Peak Output (Source, Sink): 210mA, 360mA
High Side Voltage Max (Bootstrap): 600V
Rise / Fall Time (Typ): 100ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Quality and Safety Features
Robust construction for long-term reliability
Over-temperature and over-current protection features
Compatibility
Compatible with a wide range of IGBT and MOSFET devices
Easy integration into various circuit designs due to surface mount packaging
Application Areas
Motor Control
Switch Mode Power Supplies (SMPS)
Power Conversion
Inverters
Product Lifecycle
Product Status: Active
Not nearing discontinuation
Replacements or upgrades may be available, as per Infineon's product roadmap
Several Key Reasons to Choose This Product
High efficiency and fast switching for improved power management
Operational stability at high temperatures
High voltage rating ideal for bootstrap operations in half-bridge designs
Versatile driver IC suitable for a broad range of applications
Supplied by a reputable manufacturer with a track record in power management solutions
IR20CJQ60IR