IR2101STRPBF - Infineon Technologies

Manufacturer Part Number

IR2101STRPBF

Manufacturer

Infineon Technologies

Introduction

The IR2101STRPBF is a high-power, half-bridge driver IC designed for efficient power management and gate driving solutions.

Product Features and Performance

Independent channel half-bridge driver configuration

Efficient driving of IGBT and N-Channel MOSFET gates

High side voltage capability up to 600V for bootstrap operations

Fast rise and fall times of 100ns and 50ns respectively

Wide operating supply voltage range of 10V to 20V

Product Advantages

High peak output current capability with 210mA source and 360mA sink

Support for high temperature operation up to 150°C

Non-inverting input simplifies signal processing

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Independent

Number of Drivers: 2

Gate Type: IGBT, N-Channel MOSFET

Voltage Supply: 10V ~ 20V

Logic Voltage VIL, VIH: 0.8V, 3V

Current Peak Output (Source, Sink): 210mA, 360mA

High Side Voltage Max (Bootstrap): 600V

Rise / Fall Time (Typ): 100ns, 50ns

Operating Temperature: -40°C ~ 150°C (TJ)

Quality and Safety Features

Robust construction for long-term reliability

Over-temperature and over-current protection features

Compatibility

Compatible with a wide range of IGBT and MOSFET devices

Easy integration into various circuit designs due to surface mount packaging

Application Areas

Motor Control

Switch Mode Power Supplies (SMPS)

Power Conversion

Inverters

Product Lifecycle

Product Status: Active

Not nearing discontinuation

Replacements or upgrades may be available, as per Infineon's product roadmap

Several Key Reasons to Choose This Product

High efficiency and fast switching for improved power management

Operational stability at high temperatures

High voltage rating ideal for bootstrap operations in half-bridge designs

Versatile driver IC suitable for a broad range of applications

Supplied by a reputable manufacturer with a track record in power management solutions