Manufacturer Part Number
IPP60R180C7
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Part of the CoolMOS series
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High drain-source voltage: 600V
Low on-resistance: 180mΩ @ 5.3A, 10V
High continuous drain current: 13A @ 25°C
Low input capacitance: 1080pF @ 400V
High power dissipation: 68W
Product Advantages
Excellent efficiency and low switching losses
Robust and reliable performance
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 180mΩ
Continuous Drain Current (Id): 13A
Input Capacitance (Ciss): 1080pF
Power Dissipation: 68W
Quality and Safety Features
Robust TO-220-3 package
Supports high-temperature operation
Designed for high reliability and safety
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
Currently available
No plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent efficiency and low switching losses
Robust and reliable performance
Wide operating temperature range
High drain-source voltage and continuous drain current
Low on-resistance and input capacitance
Suitable for demanding high-voltage, high-power applications
