Manufacturer Part Number
IPP60R165CP
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET for power applications
Product Features and Performance
600V CoolMOS MOSFET
Low on-resistance of 165mΩ
High power density and efficient power conversion
Optimized for low switching losses
Robust design with excellent avalanche capability
Product Advantages
Improved energy efficiency
High power density
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
On-State Resistance (Rds(on)): 165mΩ
Continuous Drain Current (Id): 21A
Input Capacitance (Ciss): 2000pF
Power Dissipation (Tc): 192W
Quality and Safety Features
Designed for high reliability and safety
Complies with relevant industry standards
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Product Lifecycle
Currently available, no plans for discontinuation
Upgrades and replacements may be available in the future
Key Reasons to Choose This Product
Excellent performance and energy efficiency
Robust and reliable design
High power density and scalability
Suitable for a wide range of power applications