Manufacturer Part Number
IPP60R190C6XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Part of the CoolMOS series from Infineon
Product Features and Performance
Wide operating temperature range of -55°C to 150°C (TJ)
High drain-to-source voltage of 600V
Low on-resistance (RDS(on)) of 190mΩ @ 9.5A, 10V
High continuous drain current (ID) of 20.2A @ 25°C (Tc)
Low input capacitance (Ciss) of 1400pF @ 100V
Max power dissipation of 151W (Tc)
Product Advantages
Excellent efficiency and thermal performance
High reliability and ruggedness
Supports various high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600V
Gate-to-Source Voltage (VGS): ±20V
Threshold Voltage (VGS(th)): 3.5V @ 630A
Drive Voltage (VGS): 10V
Gate Charge (Qg): 63nC @ 10V
Quality and Safety Features
RoHS3 compliant
Housed in a PG-TO220-3 package
Compatibility
Compatible with various high-voltage power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available and not nearing discontinuation
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-voltage applications
High reliability and ruggedness for industrial and consumer electronics
Supports a wide range of high-voltage power electronics applications
Part of the well-regarded CoolMOS series from Infineon Technologies
